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2SC4784 Datasheet PDF

Hitachi 2SC4784

NPN TRANSISTOR

Part No. 2SC4784
Datasheet 2SC4784 Download
Manufacturer
Hitachi
Description NPN TRANSISTOR
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2SC4784 datasheet page 1 preview

FEATURES

● High gain bandwidth product fT = 10 GHz Typ.
● High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4784

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 20 100 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “YA–”. I EBO hFE Cob fT PG NF Min — — — 50 — 7.0 12.0 — Typ — — — 120 0.45 10.0 15.0 1.2 Max 10 1 10 250 0.8 — — 2.5 pF GHz dB dB Unit µA mA µA Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Attention: This is electrostatic sensitve device.
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