Hitachi 2SC4796
Silicon NPN Transistor
FEATURES
● High speed switching tf ≤ 0.6 µs● High breakdown voltage VCBO = 1700 V
● Isolated package TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Symbol VCBO VCEO VEBO IC ic(surge) PC*1 Tj Tstg Rating 1700 900 6 6 16 50 150 –55 to +150 Unit V V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— 2SC4796ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 900 Typ — Max — Uni...