Hitachi 2SC4905
Silicon NPN Bipolar Transistor
FEATURES
● High gain bandwidth product fT = 5.8 GHz typ● High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz CMPAK 3 1 2 1. Emitter 2. Base 3. Collector Table 1
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 20 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 12 V ——————————————————————————————————————————— Emitter to base voltage VEBO 2 V ——————————————————————————————————————————— Collector current IC 50 mA ——————————————————————————————————————————— Collector power dissipation PC 100 mW ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— 2SC4905 Table 2ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector t...