Hitachi 2SC5219
Silicon NPN Triple Diffused Planar Transistor
| Part No. | 2SC5219 |
|---|---|
| Datasheet | 2SC5219 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Triple Diffused Planar Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage VCES = 1700 V● High speed switching tf = 0.15 µsec (typ)
● Built-in damper diode type
● Isolated package TO-3P●FM Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 Free Datasheet 2SC5219
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Diode current Note: 1. Value at TC = 25°C Symbol VCES VEBO IC IC(peak) PC* Tj Tstg ID 1 Ratings 1700 6 8 16 50 150 –55 to +150 8 Unit V V A A W °C °C AELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Forward voltage of damper diode Fall time Symbol V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf Min 6 — 6 — — — — Typ — — — — — — 0.15 Max — 500 25 5 1.5 2 0.3 V V V µs Unit V µA Test conditions IE = 500 mA,...
