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2SC5219 - Silicon NPN Triple Diffused Planar Transistor

Key Features

  • High breakdown voltage VCES = 1700 V.
  • High speed switching tf = 0.15 µsec (typ).
  • Built-in damper diode type.
  • Isolated package TO-3P.
  • FM Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 Free Datasheet http://www. datasheet4u. com/ 2SC5219 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage tem.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 µsec (typ) • Built-in damper diode type • Isolated package TO-3P•FM Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 Free Datasheet http://www.datasheet4u.com/ 2SC5219 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Diode current Note: 1.