2SC5237 - Silicon NPN Epitaxial Type Transistor

Hitachi Semiconductor (now Renesas)

Key Features

Excellent high frequency characteristics fT = 400 MHz typ.
High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ.
Suitable for wide band video amplifier Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 Free Datasheet http://www. datasheet4u. com/ 2SC5237 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation.

2SC5237 silicon npn epitaxial type transistor by Hitachi Semiconductor (now Renesas) - Datasheet Preview

Datasheet Details

Part number	2SC5237
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	52.84 KB
Description	Silicon NPN Epitaxial Type Transistor
Datasheet	2SC5237 Datasheet

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2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 400 MHz typ • High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ • Suitable for wide band video amplifier Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 Free Datasheet http://www.datasheet4u.com/ 2SC5237 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC Tj Tstg Ratings 250 250 3 150 300 1.4 8* Junction temperature Storage temperature Note: 1.