Hitachi 2SC5247
Silicon NPN Transistor
| Part No. | 2SC5247 |
|---|---|
| Datasheet | 2SC5247 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High gain bandwidth product fT = 13.5 GHz typ● High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5247
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “ZD–”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 80 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO hFE Cob fT PG NF Min 15 — — — 50 — 10.5 14 — Typ — — — — 100 0.
