Hitachi 2SC5480
Silicon NPN Triple Diffused Planar Transistor
| Part No. | 2SC5480 |
|---|---|
| Datasheet | 2SC5480 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Triple Diffused Planar Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage VCES = 1500 V● Isolated package TO–3PFM
● Built-in damper diode Outline TO–3PFM C 2 1 B 3 E 1 2 3 1. Base 2. Collector 3. Emitter 2SC5480
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: 1. Value at Tc = 25° C Symbol VCES VEBO IC ic(peak) PC Tj Tstg ID Note1 Ratings 1500 5 14 28 50 150 –55 to +150 14 Unit V V A A W °C °C AELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Symbol V(BR)EBO I CES hFE1 hFE2 Min 5 — 5 4 — — — — Typ — — — — — — — 0.2 Max — 500 25 7 5 1.5 2 0.4 V V V µs Unit V µA Test Conditions I E = 500mA, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 10A I C = 10A, IB = 2.5A I C = 10A, IB = 2.5A I F = 14A I CP = 7A, I...
