Hitachi 2SC5702
Silicon NPN Transistor
| Part No. | 2SC5702 |
|---|---|
| Datasheet | 2SC5702 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High gain bandwidth product fT = 8 GHz typ.● High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “ZS-”. Free Datasheet 2SC5702
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 50 80 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob fT PG NF Min 15 80 6.5 11 Typ 18.5 120 0.85 8.0 13 1.05 Max 1 1 10 160 1.2 1.9 Unit V µA mA mA V pF GHz dB dB Test Conditions I C...
