Hitachi 2SC5812
NPN TRANSISTOR
| Part No. | 2SC5812 |
|---|---|
| Datasheet | 2SC5812 Download |
| Manufacturer |  Hitachi |
| Description | NPN TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● High power gain, Low noise figure at low power operation: |S21| = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 2 Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WG–“. 2SC5812ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 4 1.5 50 80 150 −55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Collector output capacitance Gain bandwidth product Gain bandwidth product Forward transmission coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre Cob fT(1) fT(2) |S21| NF 2 Min 15 100 8 14 Typ 120 0.2 0.4 11 15 17 1.0 Max ...
