Hitachi 2SC5827
Silicon NPN Epitaxial Type Transistor
| Part No. | 2SC5827 |
|---|---|
| Datasheet | 2SC5827 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Epitaxial Type Transistor |
| Buy | Stock & Price |
FEATURES
● Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WW–”. 2SC5827ABSOLUTE MAXIMUM RATINGS
(Ta = 25 °C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 5.5 1.5 80 80 150 −55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25 °C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15 100 1.5 10.5 Typ 120 0.85 4.5 13.5 1.1 Max 0.1 1 0.1 150 1.15 1.8 Unit V µA µA µA pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 5.5 V, RBE = Infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.0, Nov.
