Hitachi 2SD1085K
Silicon NPN Transistor
| Part No. | 2SD1085K |
|---|---|
| Datasheet | 2SD1085K Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) PC*1 Tj Tstg Rating Unit 300 V 300 V 7 V 3 A 6 A 40 W 150 °C –55 to +150 °C 2SD1085(K)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Collector to base breakdown V(BR)CBO 300 — voltage Collector to emitter sustain VCEO(sus) 300 — voltage Emitter to base breakdown V(BR)EBO 7 — voltage Collector cutoff current ICEO — — DC current transfer ratio hFE 500 — Collector to emitter saturation VCE(sat) — — voltage Base to emitter saturation VBE(sat) — — voltage Turn on time Turn off time Note: 1. Pulse test. ton — 1.0 toff — 22 Max Unit 500 V — V — V 100 µA — 1.5 V 2.0 V — µs — µs Test conditions IC = 0.1 mA, IE = 0 IC = 2 A, PW = 50 µs, f = 50 Hz, L = 10 mH IE = 50 mA, IC = 0 VCE = 300 V, RBE =...
