Hitachi 2SD1115K
Silicon NPN Transistor
| Part No. | 2SD1115K |
|---|---|
| Datasheet | 2SD1115K Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) PC* Tj Tstg 1 Ratings 400 300 7 3 6 40 150 –55 to +150 Unit V V V A A W °C °C 2SD1115(K)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO VCEO(sus) V(BR)EBO ICEO hFE VCE(sat) VBE(sat) ton toff Min 400 300 7 — 500 — — — — Typ — — — — — — — 1.0 22 Max — — — 100 — 1.5 2.0 — — Unit V V V µA Test conditions IC = 0.1 mA, IE = 0 IC = 2 A, PW = 50 µs, f = 50 Hz, L = 10 mH IE = 50 mA, IC = 0 VCE = 300 V, RBE = ∞ VCE = 2 V, IC = 2 A* 1 DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1.
