ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 15 5 0.7 150 150 –55 to +150 Unit V V V A mW °C °C ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 15 5 — 1 Typ — — — — — — — 250 Max — — — 1.0 800 1.0 0.5 — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 150 mA*2 VCE = 1 V, IC = 150 mA*2 I C = 500 mA, IB = 50 mA*2 VCE = 1 V, IC = 150 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product V(BR)EBO I CBO hFE* VBE VCE(sat) fT 250 — — — V V MHz Notes: 1. The 2SD1306 is grouped by h FE as follows.
Hitachi
