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2SD1366 Datasheet PDF

Hitachi 2SD1366

The 2SD1366 is grouped by h FE as follows.
Part No. 2SD1366
Datasheet 2SD1366 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SD1366 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 25 20 5 1 1.5 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 — — 1 Typ — — — — Max — — — 0.1 0.1 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VEB = 4 V, IC = 0 VCE = 2 V, IC = 0.5 A, Pulse Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth produc...
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