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2SD1376K Datasheet PDF

Hitachi 2SD1376K

Silicon NPN Transistor

Part No. 2SD1376K
Datasheet 2SD1376K Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SD1376K datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) PC * Tj Tstg ID* 1 1 Rating 120 120 7 1.5 3.0 20 150 –55 to +150 1.5 Unit V V V A A W °C °C A

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min 120 7 — — 2000 — — — — — — — Typ — — — — — — — — — — 0.5 2.0 Max — — 100 10 30000 1.5 2.0 2.0 2.5 3.0 — — V V V V V µs µs Unit V V µA µA Test conditions I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 I C = 1 A, IB1 = –IB2 = 1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CE...
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