Hitachi 2SD1527
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Rating 1000 1000 5 0.5 1.8 25 150 –55 to +150 Unit V V V A W W °C °C 2SD1527ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 1000 5 — 10 10 — — — — Typ — — — — — — — 5 5 Max — — 10 — — 1.2 5 — — V V MHz pF Unit V V µA Test conditions I C = 1 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 800 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 100 mA VCE = 5 V, IC = 100 mA I C = 300 mA, IB = 60 mA VCE = 20 V, IC = 50 mA VCB = 100 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1 hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance...