Hitachi 2SD1676
NPN Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Supply voltage Input voltage Output current Total power dissipation Operating temperature Storage temperature Symbol VCC VI IO PT TOP Tstg Ratings 20 ±10 600 300 –25 to +110 –55 to +150 Unit V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Input on voltage Input off voltage Output saturation voltage Output cutoff current DC current transfer ratio Input resistance Resistance ratio Turn on time Storage time Fall time Output on resistance Symbol VI(on) VI(off) VO(on) I O(off) Gi R1 R1/R2 t on t stg tf ron Min 1.1 0.5 — — 60 — 0.9 — — — — Typ — — 20 — 100 6.8 1.0 0.3 1.5 0.7 1.0 Max 1.7 1.2 40 0.5 — — 1.1 — — — — µS µS µS Ω VI = 7 V, RL = 1kΩ, f = 1kHz VCC = 5 V, VI = 5 V, RL = 1kΩ kΩ Unit V V mV µA Test conditions VCC = 0.2 V, IO = 10 mA VCC = 5 V, IO = 10 µA I O = 10 mA, II = 0.5 mA VCC = 5 V, VI = 0 VCC = 5 V, IO = 10 mA 2 2SD1676 3 2SD1676 4 2SD1676 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.