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2SD1922 Datasheet PDF

Hitachi 2SD1922

Silicon NPN Transistor

Part No. 2SD1922
Datasheet 2SD1922 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SD1922 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ic (peak) ID PC Tj Tstg Ratings 25 25 6 0.8 1.5 0.8 0.9 150 –55 to +150 Unit V V V A A A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 — — — 250 — — Typ — — — — — — — — — — Max — 35 35 — 0.2 0.5 0.2 1200 0.3 1.1 V V Unit V V V V µA µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I C = 0.8 A, RBE = ∞, L = 20 mH I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A*1 I C = 0.8 A, IB = 80 mA*1 I D = 0.8 A*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Note: 1.
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