Hitachi 2SD1974
Silicon NPN Transistor
| Part No. | 2SD1974 |
|---|---|
| Datasheet | 2SD1974 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC ic (peak) ID PC * Tj Tstg 1 Ratings 25 25 6 0.8 1.5 0.6 1.0 150 –55 to +150 Unit V V V A A A W °C °C 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 — — — 250 — — Typ — — — — — — — — — — Max — 35 35 — 0.2 0.5 0.2 1200 0.4 1.5 V V Unit V V V V µA µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I C = 0.8 A, RBE = ∞, L = 20 mH I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A*1 I C = 0.8 A, IB = 80 mA*1 I D = 0.6 A*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base br...
