Hitachi 2SD2046
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VEBO IC ic (peak) PC Tj Tstg ID Ratings 50 7 1.5 3.0 1.0 150 –55 to +150 1.5 Unit V V A A W °C °C AELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage (Zener breakdown voltage) Symbol V(BR)CBO (Vz ) Min 50 Typ 60 Max 70 Unit V Test conditions I C = 0.1 mA, IE = ∞ Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage V(BR)EBO I CEO hFE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 E to C diode forward voltage Note: 1. Pulse test VD 50 7 — 2000 — — — — — — — — — — — — — — — — 10 10000 1.5 2.0 2.0 2.5 3.0 V V µA I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCE = 40 V, RBE = ∞ VCE...