Hitachi 2SD2115
Silicon NPN Epitaxial Planar Transistor
| Part No. | 2SD2115 |
|---|---|
| Datasheet | 2SD2115 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Rating 150 60 5 2 2.5 18 150 –55 to +150 Unit V V V A A W °C °C 2SD2115(L)/(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 60 5 — 150 — — — Typ — — — — — — — — Max — — — 10 — 0.8 1.3 0.6 V V µs Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1.5 A*1 I C = 1.5 A, IB = 0.05 A*1 I C = 1.5 A, IB = 0.05 A*1 I C = 1.5 A, IB1 = –IB2 = 50 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1.
