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2SD2121L Datasheet PDF

Hitachi 2SD2121L

The 2SD2121(L)/(S) is grouped by hFE1 as follows.
Part No. 2SD2121L
Datasheet 2SD2121L Download
Manufacturer
Hitachi
Description Silicon NPN Epitaxial Planar Transistor
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2SD2121L datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 35 35 5 2.5 3 18 150 –55 to +150 Unit V V V A A W °C °C 2SD2121(L)/(S)

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 35 5 — 1 Typ — — — — — — — — Max — — — 20 320 — 1.5 1.0 Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 35 V, IE = 0 VCE = 2 V, IC = 0.5 A*2 VCE = 2 V, IC = 1.5 A*2 VCE = 2 V, IC = 1.5 A*2 I C = 2 A, IB = 0.2 A*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat) 60 20 — — V V Notes: 1.
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