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2SD2122L Datasheet PDF

Hitachi 2SD2122L

The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h FE1 as follows.
Part No. 2SD2122L
Datasheet 2SD2122L Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SD2122L datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SD2122(L)/(S) 2SD2123(L)/(S) Unit 180 120 5 1.5 3 18 150 –55 to +150 180 160 5 1.5 3 18 150 –55 to +150 V V V A A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) 2SD2122(L)/(S) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 2 2SD2123(L)/(S) Min 180 160 5 — 60 30 — — — — Typ — — — — — — — — 180 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 500 mA*1 I C = 500 mA, I B = 50 mA*1 VCE = 5 V, IC = 150 mA*...
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