Hitachi 2SD2213
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VCEO VEBO IC ic (peak) PC Tj Tstg ID Ratings 150 80 8 1.5 3 0.9 150 –55 to +150 1.5 Unit V V V A A W °C °C AELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 80 8 — — 2000 5000 1000 — — — Typ — — — — — — — — — — — Max — — — 5.0 5.0 — 30000 — 1.5 2.0 3.0 V V V Unit V V V µA µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 65 V, IE = ∞ VCE = 2 V, IC = 0.15 A*1 VCE = 2 V, IC = 1 A*1 VCE = 2 V, IC = 1.5 A*1 I C = 1 A*1, I B = 1 mA I C = 1 A*1, I B = 1 mA I D = 1.5 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE hFE hFE Collector to emitter saturation voltage Base to emitter saturation voltage E to C diode forward voltage Note: 1.