Hitachi 2SD2263
Silicon NPN Transistor
FEATURES
● Build in zener diode for surge absorb.● Suitable for relay drive with small power loss. Outline TO-92 (1) 2 3 ID 1. Emitter 2. Collector 3. Base 3 2 1 1 2SD2263
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) ID PC Tj Tstg Ratings 25 25 6 0.5 1.0 0.5 0.5 150 –55 to +150 Unit V V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 26 6 — — — 100 50 — — Typ — — — — — — — — — — — Max — 35 36 — 0.2 0.5 0.2 500 — 0.5 1.2 V V Unit V V V V µA µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I C = 0.5 A, RBE = ∞, L = 20 mH I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 50 mA*1 VCE = 2 V, IC = 0.5 A*1 I C = 0.5 A*1, I B =...