Hitachi 2SD2300
Silicon NPN Transistor
| Part No. | 2SD2300 |
|---|---|
| Datasheet | 2SD2300 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage VCBO = 1500 V● Built-in damper diode type Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 2SD2300
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCES VEBO IC IC(peak) IC(surge) PC* Tj Tstg ID 1 Ratings 1500 6 5 6 16 50 150 –55 to +150 6 Unit V V A A A W °C °C AELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Fall time Symbol V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf Min 6 — — — — — — Typ — — — — — — — Max — 500 20 5 1.5 3.0 1.0 V V V µs Unit V µA Test conditions IE = 350 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5...
