ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 1.0 1.5 0.9 150 –55 to +150 Unit V V V A A W °C °C ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 — 1 Typ — — — — — 0.2 0.79 190 22 Max — — — 1.0 240 0.5 1.0 — — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 2 V, IC = 0.5 A*2 I C = 0.8 A, IB = 0.08 A*2 VCE = 2 V, IC = 0.5 A*2 VCE = 2 V, IC = 0.5 A*2 VCB = 10 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CBO hFE* 85 — — — — VCE(sat) VBE fT Cob V V MHz pF Notes: 1.
Hitachi
