Hitachi 2SH12
Silicon N-Channel IGBT
| Part No. | 2SH12 |
|---|---|
| Datasheet | 2SH12 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● High speed switching● Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 15 30 60 150 –55 to +150 Unit V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ic(peak) PC* Tj IC VGES ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Tstg ——————————————————————————————————————————— * Value at Tc = 25°C 1 2SH12 Table 2ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to emitter breakdown voltage Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff current Collector to emitte...
