Datasheet Summary
Silicon P-Channel MOS FET
Application
High speed power switching
Features
- Low on-resistance
- High speed switching
- Low drive current
- 4 V gate drive device
Can be driven from 5 V source
- Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
TO-220FM
D 12 3 1. Gate
G 2. Drain 3....
