Hitachi 2SJ177
Silicon P-Channel MOSFET
FEATURES
● Low on-resistance● High speed switching
● Low drive current
● 4 V gate drive device Can be driven from 5 V source
● Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SJ177
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) IDR Pch*2 Tch Tstg Ratings –60 ±20 –20 –80 –20 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ177ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS –60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resista...