Datasheet4U Logo Datasheet4U.com

2SJ177 - Silicon P-Channel MOSFET

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device  Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SJ177 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipatio.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ177 P-Channel MOSFET VBsemi
2SJ170 P-Channel MOSFET Transistor Inchange Semiconductor
2SJ171 P-Channel MOSFET Transistor Inchange Semiconductor
2SJ172 P-Channel MOSFET Hitachi Semiconductor
2SJ174 SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING Hitachi Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ176 SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
2SJ122 Silicon P-Channel MOSFET
2SJ220 Silicon P-Channel MOS FET
2SJ220L Silicon P-Channel MOS FET
2SJ220S Silicon P-Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SJ177 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SJ177 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.