Hitachi 2SJ217
P-Channel MOSFET
| Part No. | 2SJ217 |
|---|---|
| Datasheet | 2SJ217 Download |
| Manufacturer |  Hitachi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source
● Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ217
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –60 ±20 –45 –180 –45 150 150 –55 to +150 Unit V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS –60 ±20 — — –1.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 16 — — — — — — — — — Typ — — — — — 0.033 0.045 25 3800 2000 490 30 2...
