Hitachi 2SJ245
Silicon P-Channel MOS FET
| Part No. | 2SJ245 |
|---|---|
| Datasheet | 2SJ245 Download |
| Manufacturer |  Hitachi |
| Description | Silicon P-Channel MOS FET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● High speed switching
● Low drive current
● 4 V gate drive device can be driven from 5 V source
● Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Source 4. Drain S November 1996 2SJ245(L), 2SJ245(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) IDR Pch*2 Tch Tstg Ratings –60 ±20 –5 –20 –5 20 150 –55 to +150 Unit V V A A A W °C °C 2SJ245(L), 2SJ245(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS –60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RD...
