Hitachi 2SJ352
P-Channel MOSFET
FEATURES
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● High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 VDSX –180 V –200 V 2SJ351, 2SJ352 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage 2SJ351 2SJ352 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings –180 –200 ±20 –8 –8 100 150 –55 to +150 Unit V V A A W °C °C 2 2SJ351, 2SJ352ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage 2SJ351 2SJ352 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol Min V(BR)DSX –180 –200 ±20 –0.15 — 0.7 — — — — — Typ — — — — — 1.0 800 1000 18 320 120 Max — — — –1.45 –12 1.4 — — — — — V...