2SJ479S Datasheet PDF

FEATURES

● Low on-resistance R DS(on) = 25 mΩ typ.
● 4V gate drive devices.
● High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ479(L), 2SJ479(S)

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –30 ±20 –30 –120 –30 50 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ479(L), 2SJ479(S)

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –30 ±20 — — –1.0 — — 12 — — — — — — — — — Typ — — — — — 25 40 20 1700 950 260 20 290 170 130 –1.1 70 Max — — –10 ±10 –2.0 35 60 — — — — — — — — — — Unit V V...