2SJ506S Datasheet PDF

FEATURES

● Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A)
● Low drive current
● High speed switching
● 4V gate drive devices. Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S)

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –30 ±20 –10 –40 –10 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ506(L), 2SJ506(S)

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –30 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 65 110 16 660 440 140 12 65 85 65 –1.05 65 Max — —...