Hitachi 2SJ518
Silicon P-Channel MOSFET
| Part No. | 2SJ518 |
|---|---|
| Datasheet | 2SJ518 Download |
| Manufacturer |  Hitachi |
| Description | Silicon P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) = 0.35 Ω typ. at (V GS = –10V, ID = –1A)● Low drive current
● 4 V gete drive devices
● High speed switching Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ518
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note2 Note1 Ratings –60 ±20 –2 –4 –2 –2 0.34 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg Note3 1 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at when using the aluminaceramic board (12.5x20x0.7mm)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 1.2 — — — — — — — — — Typ — — — — — 0.35 0.45 2.0 220 110 35 10 11 45 30 –1.05 50 Max — — –10 ±10 –2.0 0.46 0.63 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF p...
