2SJ533 Datasheet PDF

FEATURES

● Low on-resistance R DS(on) = 0.028 Ω typ.
● Low drive current.
● 4V gate drive devices.
● High speed switching. Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source 2SJ533

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –30 –120 –30 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –30 77 35 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 15 — — — — — — — — — Typ — — — — — 0.028 0.038 25 2500 1300 300 25 150 350 220 –0.95 100 Max — — –10 ±10 –2.0 0.037 0.055 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –30A, VGS = 0 I F = –30A...