2SJ551 Datasheet PDF

FEATURES

● Low on-resistance R DS(on) = 0.050 Ω typ.
● Low drive current.
● 4V gate drive devices.
● High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ551(L),2SJ551(S)

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –18 –72 –18 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –18 27 60 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 0.050 0.070 16 1300 650 180 14 95 190 135 –1.0 70 Max — — –10 ±10 –2.0 0.065 0.110 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –...