Hitachi 2SK1152S
Silicon N-Channel MOSFET
| Part No. | 2SK1152S |
|---|---|
| Datasheet | 2SK1152S Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1151(L)(S), 2SK1152(L)(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage 2SK1151 2SK1152 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 1.5 6 1.5 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1151(L)(S), 2SK1152(L)(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1151 V(BR)DSS 2SK1152 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 100 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss...
