Hitachi 2SK1297
Silicon N-Channel MOS FET
| Part No. | 2SK1297 |
|---|---|
| Datasheet | 2SK1297 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOS FET |
| Buy | Stock & Price |
FEATURES
x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1297ABSOLUTE MAXIMUM RATINGS
(Ta = 25GC) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings 60 Unit V V A A A W r20 40 160 40 100 150 –55 to +150 Channel temperature Storage temperature Notes 1. PW d 10 Ps, duty cycle d 1% 2. Value at TC = 25qC qC qC 2 2SK1297ELECTRICAL CHARACTERISTICS
(Ta = 25GC) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) 60 Typ — — — — — 0.015 0.02 35 3600 1850 450 30 170 700 350 1.2 155 Max — — Unit V V Test conditions ID = 10 mA, VGS = 0 IG...
