Hitachi 2SK1318
Silicon N-Channel MOS FET
| Part No. | 2SK1318 |
|---|---|
| Datasheet | 2SK1318 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOS FET |
| Buy | Stock & Price |
FEATURES
●●
●
●
● Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1318
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D (peak)* I DR Pch*2 Tch Tstg 1 Ratings 120 ±20 20 80 20 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1318ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse tra...
