Hitachi 2SK1335L
Silicon N-Channel MOSFET
FEATURES
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● Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1335(L), 2SK1335(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 200 ±20 3 12 3 20 150 –55 to +150 Unit V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 200 ±20 — — 2.0 — 1.5 — — — — — — — — — Typ — — — — — 0.5 2.3 380 150 35 10 27 30 20 1.0 120 Max — — ±10 100 4.0 0.8 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns n...