Hitachi 2SK1623
Silicon N-Channel MOSFET
FEATURES
● Low on-resistance● High speed switching
● 4 V gate drive device Can be driven from 5 V source
● Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1623(L), 2SK1623(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol V(BR)DSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 100 ±20 20 80 20 50 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1623(L), 2SK1623(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20 — — 1.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — Typ — — — — — 0.06...