Hitachi 2SK1835
Silicon N-Channel MOSFET
FEATURES
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● High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1835
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 1500 ±20 4 10 4 125 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1835ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 1500 — — 2.0 — 0.9 — — — — — — — — — Typ — — — — 4.6 1.4 1700 230 100 25 80 230 80 0.85 2500 Max — ±1 500 4.0 7.0 — — — — — — — — — — Unit V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 4 A, VGS = 0 I F = 4 A...