Hitachi 2SK2008
Silicon N-Channel MOS FET
| Part No. | 2SK2008 |
|---|---|
| Datasheet | 2SK2008 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOS FET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2008
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 20 80 20 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2008ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 ±30 — — 2.0 — 9.0 — — — — — — — — — Typ — — — — — 0.12 14 2340 1000 160 30 125 190 100 1.2 120 Max — — ±10 250 3.0 0.15 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns n...
