Hitachi 2SK2118
Silicon N-Channel MOSFET
FEATURES
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● Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2118
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 5 20 5 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2118ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 ±30 — — 2.0 — 3.0 — — — — — — — — — Typ — — — — — 1.1 5.0 1000 250 45 12 45 105 55 0.9 500 Max — — ±10 250 3.0 1.5 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V n...