Hitachi 2SK2221
Silicon N-Channel MOSFET
FEATURES
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● High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK2220, 2SK2221
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. Value at Tc = 25 °C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings 180 200 ±20 8 8 100 150 –55 to +150 Unit V V A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage 2SK2220 2SK2221 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol V(BR)DSX Min 180 200 ±20 0.15 — 0.7 — — — — — Typ — — — — — 1.0 600 800 8 250 90 Max — — — 1.45 12 1.4 — — — — — V V V S pF pF pF ns ns I G = ±100 µA, VDS = 0 I D = 100 mA VDS = 10 V I D = 8 A, VGD =...