Hitachi 2SK2393
Silicon N-Channel MOSFET
FEATURES
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● Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK2393
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 1500 ±20 8 20 8 200 150 –55 to +150 Unit V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 1500 — — 2.0 — 1.8 — — — — — — — — — Typ — — — — 1.9 3.0 4370 560 200 75 180 260 125 0.9 6.5 Max — ±1 500 4.0 2.8 — — — — — — — — — — Unit V µA µA V Ω S pF pF pF ns ns ns ns V µs I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, d...