Hitachi 2SK2408
Silicon N-Channel MOSFET
FEATURES
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● Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, Motor control Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2408
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 500 ±30 7 28 7 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2408ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 500 ±30 — — 2.0 — 3.5 — — — — — — — — — Typ — — — — — 0.7 6.0 1100 310 50 15 55 100 48 0.9 120 Max — — ±10 250 3.0 0.9 — — — — — — — — — — Unit V V µA µA V Ω S pF pF...