Hitachi 2SK2553L
N-Channel MOSFET
FEATURES
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● Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553(L), 2SK2553(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note 1 Ratings 60 ±20 50 200 50 45 174 75 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 2 2SK2553(L), 2SK2553(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capa...