Hitachi 2SK2586
Silicon N-Channel MOSFET
| Part No. | 2SK2586 |
|---|---|
| Datasheet | 2SK2586 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2586
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID* 2 1 Ratings 60 ±20 60 240 60 45 Unit V V A A A A mJ W °C °C I D(pulse)* I DR* I AP * 2 3 3 2 EAR* 174 125 150 –55 to +150 Pch* Tch Tstg 2 2SK2586ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capaci...
